Critical Temperature Enhancement by Biaxial Compressive Strain in FeSe0.5Te0.5 Thin Films

被引：21

作者：

Bellingeri, E. ^{[1
]}

Pallecchi, I. ^{[1
]}

Buzio, R. ^{[1
]}

Gerbi, A. ^{[1
]}

Marre, D. ^{[1
,2
]}

Cimberle, M. R. ^{[2
]}

Tropeano, M. ^{[1
,2
]}

Putti, M. ^{[1
,2
]}

Palenzona, A. ^{[1
,3
]}

Kaciulis, S. ^{[4
]}

Ferdeghini, C. ^{[1
]}

机构：

[1] CNR SPIN, I-16152 Genoa, Italy

[2] CNR IMEM, Dipartimento Fis, I-16146 Genoa, Italy

[3] Dipartimento Chim & Chim Ind, I-16146 Genoa, Italy

[4] CNR ISMN, I-00015 Monterotondo Staz, RM, Italy

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2011年 / 24卷 / 1-2期

关键词：

Fe(Se; Te); Thin films; Epitaxial growth; Strain;

D O I：

10.1007/s10948-010-0896-4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-purity epitaxial FeSe0.5Te (0.5) thin films with different thicknesses were grown by pulsed laser ablation on different substrates. By varying the film thickness, T (c) values of up to 21 K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to T (c). The latter result indicates the important role of the compressive strain in enhancing T (c): the compressive strain derives from the Volmer-Weber growth of the films. The critical temperature is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.

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收藏

页码：35 / 41

页数：7

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