Fabrication of microstrip detectors and integrated electronics on high resistivity silicon

被引：0

作者：

Dalla Betta, GF ^{[1
]}

Boscardin, M ^{[1
]}

Gregori, P ^{[1
]}

Zorzi, N ^{[1
]}

Batignani, G ^{[1
]}

Bettarini, S ^{[1
]}

Carpinelli, M ^{[1
]}

Forti, F ^{[1
]}

Giorgi, M ^{[1
]}

Lusiani, A ^{[1
]}

Rama, M ^{[1
]}

Sandrelli, F ^{[1
]}

Simi, G ^{[1
]}

Bosisio, L ^{[1
]}

Dittongo, S ^{[1
]}

Pignatel, GU ^{[1
]}

Manfredi, PF ^{[1
]}

Manghisoni, M ^{[1
]}

Ratti, L ^{[1
]}

Speziali, V ^{[1
]}

Traversi, G ^{[1
]}

Re, V ^{[1
]}

机构：

[1] ITC irst, Div Microsist, I-38050 Trento, Italy

来源：

ADVANCED TECHNOLOGY AND PARTICLE PHYSICS, PROCEEDINGS | 2002年 / 1卷

关键词：

D O I：

10.1142/9789812776464_0036

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technological issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.

引用

页码：241 / 245

页数：5

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