DESIGN OF V-BAND MILLIMETER-WAVE CMOS LOW NOISE AMPLIFIER

被引：0
|
作者：
Kuo, Hsin-Chih [1 ]
Yang, Chu-Yun [1 ]
Chuang, Huey-Ru [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Comp & Commun Engn, Tainan 70101, Taiwan
来源：
MICROWAVE JOURNAL | 2011年 / 54卷 / 10期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A V-Band millimeter-wave CMOS low noise amplifier (LNA) fabricated with the 0.13 mu m process is presented. A three-stage cascaded common source structure is adopted. The measurement results of the fabricated LNA show the peak performance at 50 GHz exhibiting a gain of 11.7 dB and a noise figure of 7.9 dB. The input P(1dB) and IIP3 are -9.5 and -1.65 dBm, respectively. The total power consumption is 21.6 mW from a 1.2 V power supply.
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页码：118 / +
页数：5
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