Generic carrier-based core model for undoped four-terminal double-gate MOSFETs valid for symmetric, asymmetric, and independent-gate-operation modes

被引：32

作者：

Liu, Feng ^{[1
]}

He, Jin ^{[1
,3
]}

Fu, Yue ^{[2
]}

Hu, Jinhua ^{[1
]}

Bian, Wei ^{[2
]}

Song, Yan ^{[2
]}

Zhang, Xing ^{[1
,3
]}

Chan, Mansun ^{[4
]}

机构：

[1] Peking Univ, Sch Elect Engn & Comp Sci, Inst Microelect, Multiproject Wafer Ctr, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Microelect, Grp Nano & Tera Devices & Circuits, Beijing 100871, Peoples R China

[3] Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R China

[4] Hong Kong Univ Sci & Technol, Dept Elect & Comp Sci, Kowloon, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期

关键词：

carrier-based model; circuit simulation and design; compact modeling; double-gate (DG) MOSFET; nonclassical device;

D O I：

10.1109/TED.2007.914836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFETs has been developed and is presented in this paper. The model is valid for symmetric, asymmetric, and independent-gate-operation modes. Based on the exact) solution of the 1-D Poisson's equation in a general DG MOSFET configuration, a rigorous derivation of the drain-current equations from the Pao-Sah's double integral has been performed. By using the channel carriers as the intermediate variable, a very compact analytical drain-current expression can be obtained. The model is extensively verified by comparisons with a 2-D numerical simulator under a large number of biasing conditions. The concise mathematical formulation allows the unification of various DG models into a carrier-based core model for a compact DG MOSFET model development.

引用

页码：816 / 826

页数：11

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