Fast photovoltaic characteristic of silver nano-cluster doped ZnO thin films induced by 1.06 μM pulsed laser

被引：14

作者：

Zhao, Songqing ^{[1
]}

Yang, Limin ^{[1
]}

Zhou, Yueliang ^{[2
]}

Zhao, Kun ^{[1
,3
]}

机构：

[1] China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

来源：

OPTIK | 2011年 / 122卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Nano-cluster; ZnO thin films; Infrared laser-induced photovoltage; OPTICAL NONLINEARITY; LUMINESCENCE; PHOTOLUMINESCENCE;

D O I：

10.1016/j.ijleo.2010.06.028

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Fast photovoltaic characteristic was found from silver nano-cluster doped ZnO thin films when it was irradiated by 1.064 mu m infrared laser. Its arising time is about 1 ns with an open-circuit photovoltage of similar to 2 ns full width at half-maximum. A transient photovoltaic signal of similar to 80 mV occurred with a full width at half-maximum of about 2 ns was observed under the illumination of a 4 mJ pulsed laser in duration of 25 ps. This fast photovoltaic response perhaps relate to the non-uniform distribution of the silver clusters along direction perpendicular to ZnO surface. (C) 2010 Elsevier GmbH. All rights reserved.

引用

页码：960 / 962

页数：3

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