Fast photovoltaic characteristic of silver nano-cluster doped ZnO thin films induced by 1.06 μM pulsed laser

Fast photovoltaic characteristic was found from silver nano-cluster doped ZnO thin films when it was irradiated by 1.064 mu m infrared laser. Its arising time is about 1 ns with an open-circuit photovoltage of similar to 2 ns full width at half-maximum. A transient photovoltaic signal of similar to 80 mV occurred with a full width at half-maximum of about 2 ns was observed under the illumination of a 4 mJ pulsed laser in duration of 25 ps. This fast photovoltaic response perhaps relate to the non-uniform distribution of the silver clusters along direction perpendicular to ZnO surface. (C) 2010 Elsevier GmbH. All rights reserved.