Transient characteristics of reversely switched dynistors in the submicrosecond pulse range

被引：6

作者：

Gorbatyuk, A. V. ^{[1
]}

Ivanov, B. V.

Panaiotti, I. E.

Serkov, F. B.

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2012年 / 38卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Current Pulse; Technical Physic Letter; Transient Characteristic; Piece Wise Linear Function; Saturated Core;

D O I：

10.1134/S1063785012040220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient injection processes in reversely switched dynistors (RSDs) operating in a submicrosecond pulse range have been numerically simulated and the output current and voltage characteristics have been calculated. It is shown that, provided a proper choice of parameters of the silicon device structure and external chains, RSDs can be used to switch current pulses with amplitudes up to several dozen kA/cm(2), total durations of several hundred nanoseconds, and leading edge widths within 50-100 ns. The voltage decreases from the initial level by an order of magnitude already in 15-20 ns, and attains a steady value of 10-25 V during the leading edge time.

引用

页码：392 / 395

页数：4

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