Single-crystalline regions of silicon-on-glass for thin-film transistors

被引：11

作者：

Andrä, G

Bergmann, J

Christiansen, S

Falk, F

Nerding, M

Sinh, ND

机构：

[1] Inst Phys Hochtechnol, DE-07745 Jena, Germany

[2] Univ Erlangen Nurnberg, Inst Mat Wissensch Mikrocharakterisierung, DE-91058 Erlangen, Germany

来源：

POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS | 2001年 / 80-81卷

关键词：

crystalline silicon films; laser crystallization; TFT;

D O I：

10.4028/www.scientific.net/SSP.80-81.337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By scanning a beam of a frequency doubled Nd:YAG laser a-Si:H thin films on fused silica or on glass were crystallized via melting. In this way polycrystalline films with crystallites several 10 lam in size throughout were obtained. The grain boundaries are mostly electrically inactive twin boundaries. By switching the scanned laser beam on and off periodically single crystalline patches 60 mum by 250 mum in size were prepared at predefined position. The crystallites are large enough for thin film transistors or MOSFETs to be placed entirely in single crystalline areas.

引用

收藏

页码：337 / 342

页数：6

相关论文

共 14 条

[1] Multicrystalline silicon thin films:: Laser crystallization conditions and properties [J].

Andrä, G ;

Bergmann, J ;

Falk, F ;

Ose, E ;

Sinh, ND .

SOLID STATE PHENOMENA, 1999, 67-8 :187-191

[2]

ANDRA G, 1998, Patent No. 19825625

[3]

Bergmann RB, 1998, PHYS STATUS SOLIDI A, V166, P587, DOI 10.1002/(SICI)1521-396X(199804)166:2<587::AID-PSSA587>3.0.CO

[4]

2-U

[5] Laser-crystallized polycrystalline silicon on glass for photovoltaic applications [J].

Dassow, R ;

Köhler, JR ;

Grauvogl, M ;

Bergmann, RB ;

Werner, JH .

SOLID STATE PHENOMENA, 1999, 67-8 :193-197

[6] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[7] Single-crystal Si films for thin-film transistor devices [J].

Im, JS ;

Sposili, RS ;

Crowder, MA .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3434-3436

[8] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J].

KAWAMURA, S ;

SAKURAI, J ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :394-395

[9] ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR [J].

KURIYAMA, H ;

KIYAMA, S ;

NOGUCHI, S ;

KUWAHARA, T ;

ISHIDA, S ;

NOHDA, T ;

SANO, K ;

IWATA, H ;

KAWATA, H ;

OSUMI, M ;

TSUDA, S ;

NAKANO, S ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3700-3703

[10] COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS [J].

KURIYAMA, H ;

NOHDA, T ;

AYA, Y ;

KUWAHARA, T ;

WAKISAKA, K ;

KIYAMA, S ;

TSUDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10) :5657-5662