4-20 GHz GaAs True-Time Delay Amplifier MMIC

被引：13
|
作者：
Shin, Dong-Hwan [1 ,2 ]
Yom, In-Bok [1 ]
Kim, Dong-Wook [2 ]
机构：
[1] ETRI, Satellite Technol Res Grp, Daejeon 34129, South Korea
[2] Chungnam Natl Univ, Dept Radio Sci & Engn, Daejeon 34134, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
Active electronically scanned array (AESA); distributed amplifier (DA); GaAs pHEMT; monolithic microwave integrated circuit (MMIC); true-time delay (TTD);
D O I：
10.1109/LMWC.2017.2763754
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband amplifier with a fine control of the true-time delay (TTD) has been successfully implemented using a commercial 0.5-ae m GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. The proposed circuit effectively combines switching elements into an artificial transmission line structure in a distributed amplifier to achieve an adjustable TTD which enables time delay control with gain in a wider band than other GaAs-based TTD circuits. The TTD amplifier MMIC achieves a controllable delay of 9 ps, a gain of 9 to 2 dB, and a typical return loss of more than 10 dB from 4 to 20 GHz. The proposed TTD amplifier can be effectively integrated into a multifunction chip based on GaAs semiconductors for wideband active electronically scanned array or phased array systems.
引用
收藏
页码：1119 / 1121
页数：3
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