4-20 GHz GaAs True-Time Delay Amplifier MMIC

被引：13

作者：

Shin, Dong-Hwan ^{[1
,2
]}

Yom, In-Bok ^{[1
]}

Kim, Dong-Wook ^{[2
]}

机构：

[1] ETRI, Satellite Technol Res Grp, Daejeon 34129, South Korea

[2] Chungnam Natl Univ, Dept Radio Sci & Engn, Daejeon 34134, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Active electronically scanned array (AESA); distributed amplifier (DA); GaAs pHEMT; monolithic microwave integrated circuit (MMIC); true-time delay (TTD);

D O I：

10.1109/LMWC.2017.2763754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband amplifier with a fine control of the true-time delay (TTD) has been successfully implemented using a commercial 0.5-ae m GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. The proposed circuit effectively combines switching elements into an artificial transmission line structure in a distributed amplifier to achieve an adjustable TTD which enables time delay control with gain in a wider band than other GaAs-based TTD circuits. The TTD amplifier MMIC achieves a controllable delay of 9 ps, a gain of 9 to 2 dB, and a typical return loss of more than 10 dB from 4 to 20 GHz. The proposed TTD amplifier can be effectively integrated into a multifunction chip based on GaAs semiconductors for wideband active electronically scanned array or phased array systems.

引用

页码：1119 / 1121

页数：3

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