Spectroscopic study of magnesium-related impurities in silicon

被引：6

作者：

Ho, LT ^{[1
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei 115, Taiwan

来源：

DEFECTS AND DIFFUSION IN SEMICONDUCTORS: AN ANNUAL RETROSPECTIVE VI | 2003年 / 221-2卷

关键词：

impurity; magnesium; silicon; spectrum;

D O I：

10.4028/www.scientific.net/DDF.221-223.41

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The group-II element magnesium, when diffused into silicon, is in the interstitial position and behaves as double donor impurities. Magnesium can also pair with dispersed oxygen in silicon to form magnesium-oxygen complex impurities, which are interstitial double donors as well. In this review we present the experimental results on the spectroscopic study of these magnesium-related impurities in silicon. We discuss the excitation spectra associated with these impurities and some interesting features observed. The review concludes with a few remarks for further study.

引用

页码：41 / 49

页数：9

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