Spectroscopic study of magnesium-related impurities in silicon

被引：6
|
作者：
Ho, LT [1 ]
机构：
[1] Acad Sinica, Inst Phys, Taipei 115, Taiwan
来源：
DEFECTS AND DIFFUSION IN SEMICONDUCTORS: AN ANNUAL RETROSPECTIVE VI | 2003年 / 221-2卷
关键词：
impurity; magnesium; silicon; spectrum;
D O I：
10.4028/www.scientific.net/DDF.221-223.41
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The group-II element magnesium, when diffused into silicon, is in the interstitial position and behaves as double donor impurities. Magnesium can also pair with dispersed oxygen in silicon to form magnesium-oxygen complex impurities, which are interstitial double donors as well. In this review we present the experimental results on the spectroscopic study of these magnesium-related impurities in silicon. We discuss the excitation spectra associated with these impurities and some interesting features observed. The review concludes with a few remarks for further study.
引用
收藏
页码：41 / 49
页数：9
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