Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi2Te3-Based Compounds

被引:28
作者
Tao, Qirui [1 ]
Wu, Huijuan [2 ]
Pan, Wenfeng [2 ,3 ]
Zhang, Zhengkai [1 ]
Tang, Yinfei [1 ,4 ]
Wu, Yutian [1 ]
Fan, Renjie [1 ]
Chen, Zhiquan [2 ]
Wu, Jinsong [1 ,5 ]
Su, Xianli [1 ]
Tang, Xinfeng [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China
[3] Zhengzhou Univ Technol, Coll Basic Sci, Zhengzhou 450044, Peoples R China
[4] Wuhan Univ Technol, Int Sch Mat Sci & Engn, Wuhan 430070, Peoples R China
[5] Wuhan Univ Technol, Nanostruct Res Ctr, Wuhan 430070, Peoples R China
关键词
Bi2Te3-based compound; donor-like effect; thermoelectric performances; positron annihilation; hot deformation; BISMUTH-TELLURIDE; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; POINT-DEFECTS; ALLOYS; DEFORMATION; ENHANCEMENT; FIGURE; MERIT; ZT;
D O I
10.1021/acsami.1c19357
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bismuth telluride-based alloys are the best performing thermoelectric materials near room temperature. Grain size refinement and nanostructuring are the core stratagems for improving thermoelectric and mechanical properties. However, the donor-like effect induced by grain size refinement strongly restricts the thermoelectric properties especially in the vicinity of room temperature. In this study, the formation mechanism for the donor-like effect in Bi2Te3-based compounds was revealed by synthesizing five batches of polycrystalline samples. We demonstrate that the donor-like effect in Bi2Te3-based compounds is strongly related to the vacancy defects (V(B)i(") and V-Te") induced by the fracturing process and oxygen in air for the first time. The oxygen-induced donor-like effect dramatically increases the carrier concentration from 2.5 x 10(19) cm(-3) for the zone melting ingot and bulks sintered with powders ground under an inert atmosphere to 7.5 x 1019 cm(-3), which is largely beyond the optimum carrier concentration and seriously deteriorates the thermoelectric performance. Moreover, it is found that both avoiding exposure to air and eliminating the thermal vacancy defects ((B)i(") and V-Te") via heat treatment before exposure to air can effectively remove the donor-like effect, producing almost the same carrier concentration and Seebeck coefficient as those of the zone melting ingot for these samples. Therefore, a defect equation of oxygen-induced donor-like effect was proposed and was further explicitly corroborated by positron annihilation measurement. With the removal of donor-like effect and improved texturing via multiple hot deformation (HD) processes, a maximum power factor of 3.5 mW m(-1) K-2 and a reproducible maximum ZT value of 1.01 near room temperature are achieved. This newly proposed defect equation of the oxygen-induced donor-like effect will provide a guideline for developing higher-performance V2VI3 polycrystalline materials for near-room-temperature applications.
引用
收藏
页码:60216 / 60226
页数:11
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