Effect of adsorption of Group VI atoms on the silicon work function

被引：10

作者：

Davydov, SY ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2005年 / 47卷 / 09期

关键词：

D O I：

10.1134/1.2045367

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model of the adsorption of S, Se, and Te atoms on silicon is proposed. The model adequately describes the variation of the work function of the S/Si(100) and Se/Si(111) systems over the coverage range from zero to one monolayer. The S-Si, Se-Si, and Te-Si adsorption bond energies are estimated using the bonding-orbital method. (c) 2005 Pleiades Publishing, Inc.

引用

页码：1779 / 1783

页数：5

共 26 条

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