Evaluation of variable energy level of conduction band edge on fluoride resonant tunneling diodes

被引：3

作者：

Maeda, M ^{[1
]}

Watanabe, S ^{[1
]}

Tsutsui, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Engn Sci, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10A期

关键词：

resonant tunneling diode; fluoride; CaF2; CdF2; Cd-rich CaxCd1-xF2 alloy; conduction band edge;

D O I：

10.1143/JJAP.42.L1216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling diodes (RTDs) using CaF2-barrier/Cd-rich CaxCd1-xF2 alloy-well/CaF2-barrier heterostructures were fabricated by molecular beam epitaxy on Si(1 1 1) substrates. The composition, x, was varied from 0 to 0.3. It was found that the peak voltages for these diodes were shifted with the variation of x of the alloy-well layer. By the theoretical analysis of the results, the energy level of conduction band edge of CaxCd1-xF2 for each x was determined. Consequently, it turned out that the energy level changed linearly with x, in other words, the energy level followed Vegard's law. It was demonstrated that. the bottom energy level of a quantum well composed of the fluoride heterostructures could be controlled by the composition of the alloy.

引用

页码：L1216 / L1218

页数：3

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