Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon

被引:12
作者
Bischoff, D. [1 ]
Eich, M. [1 ]
Varlet, A. [1 ]
Simonet, P. [1 ]
Ihn, T. [1 ]
Ensslin, K. [1 ]
机构
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
BROKEN-SYMMETRY; COULOMB DRAG; CONFINEMENT; TRANSPORT; STATES;
D O I
10.1103/PhysRevB.91.115441
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is discussed in terms of screening or, alternatively, quantum capacitance. The ribbon can be tuned into the transport gap by applying gate voltages. Multiple sites of localized charge leading to Coulomb blockade are observed, in agreement with previous experiments. Due to the strong capacitive coupling between the ribbon and the graphene top layer sheet, the evolution of the Coulomb blockade peaks in gate voltages can be used to obtain the local density of states and therefore the quantum capacitance of the graphene top layer. Spatially varying density and doping are found, which are attributed to a spatial variation of the dielectric due to fabrication imperfections.
引用
收藏
页数:6
相关论文
共 38 条
[1]   Gate-defined quantum confinement in suspended bilayer graphene [J].
Allen, M. T. ;
Martin, J. ;
Yacoby, A. .
NATURE COMMUNICATIONS, 2012, 3
[2]   Characterizing wave functions in graphene nanodevices: Electronic transport through ultrashort graphene constrictions on a boron nitride substrate [J].
Bischoff, D. ;
Libisch, F. ;
Burgdoerfer, J. ;
Ihn, T. ;
Ensslin, K. .
PHYSICAL REVIEW B, 2014, 90 (11)
[3]   Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions [J].
Bischoff, D. ;
Varlet, A. ;
Simonet, P. ;
Ihn, T. ;
Ensslin, K. .
NEW JOURNAL OF PHYSICS, 2013, 15
[4]   Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate [J].
Bischoff, D. ;
Kraehenmann, T. ;
Droescher, S. ;
Gruner, M. A. ;
Barraud, C. ;
Ihn, T. ;
Ensslin, K. .
APPLIED PHYSICS LETTERS, 2012, 101 (20)
[5]   Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].
Britnell, L. ;
Gorbachev, R. V. ;
Jalil, R. ;
Belle, B. D. ;
Schedin, F. ;
Mishchenko, A. ;
Georgiou, T. ;
Katsnelson, M. I. ;
Eaves, L. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Leist, J. ;
Geim, A. K. ;
Novoselov, K. S. ;
Ponomarenko, L. A. .
SCIENCE, 2012, 335 (6071) :947-950
[6]   Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers [J].
Britnell, Liam ;
Gorbachev, Roman V. ;
Jalil, Rashid ;
Belle, Branson D. ;
Schedin, Fred ;
Katsnelson, Mikhail I. ;
Eaves, Laurence ;
Morozov, Sergey V. ;
Mayorov, Alexander S. ;
Peres, Nuno M. R. ;
Castro Neto, Antonio H. ;
Leist, Jon ;
Geim, Andre K. ;
Ponomarenko, Leonid A. ;
Novoselov, Kostya S. .
NANO LETTERS, 2012, 12 (03) :1707-1710
[7]   Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices [J].
Choi, Min Sup ;
Lee, Gwan-Hyoung ;
Yu, Young-Jun ;
Lee, Dae-Yeong ;
Lee, Seung Hwan ;
Kim, Philip ;
Hone, James ;
Yoo, Won Jong .
NATURE COMMUNICATIONS, 2013, 4
[8]   Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].
Dean, C. R. ;
Wang, L. ;
Maher, P. ;
Forsythe, C. ;
Ghahari, F. ;
Gao, Y. ;
Katoch, J. ;
Ishigami, M. ;
Moon, P. ;
Koshino, M. ;
Taniguchi, T. ;
Watanabe, K. ;
Shepard, K. L. ;
Hone, J. ;
Kim, P. .
NATURE, 2013, 497 (7451) :598-602
[9]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[10]   Quantum capacitance and density of states of graphene [J].
Droescher, S. ;
Roulleau, P. ;
Molitor, F. ;
Studerus, P. ;
Stampfer, C. ;
Ensslin, K. ;
Ihn, T. .
PHYSICA SCRIPTA, 2012, T146