Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

被引：78
作者：
Yoon, Kyung Jean [1 ,2 ]
Lee, Min Hwan [1 ,2 ,3 ]
Kim, Gun Hwan [1 ,2 ]
Song, Seul Ji [1 ,2 ]
Seok, Jun Yeong [1 ,2 ]
Han, Sora [1 ,2 ]
Yoon, Jung Ho [1 ,2 ]
Kim, Kyung Min [1 ,2 ]
Hwang, Cheol Seong [1 ,2 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[3] Univ Calif, Sch Engn, Merced, CA 95343 USA
来源：
NANOTECHNOLOGY | 2012年 / 23卷 / 18期
基金：
新加坡国家研究基金会;
关键词：
CURRENT-VOLTAGE CHARACTERISTICS; INTERFACE;
D O I：
10.1088/0957-4484/23/18/185202
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A tri-stable memristive switching was demonstrated on a Pt/TiO2/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO2/TiO2-x/Pt cell.
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页数：8
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