Surface-Atom Core-Level Shift in GaAs(111)A-2x2

被引：10

作者：

Pi, Tun-Wen ^{[1
]}

Chen, Bor-Rong ^{[2
]}

Huang, Mao-Lin ^{[3
]}

Chiang, Tsung-Hung ^{[2
]}

Wertheim, Gunther K. ^{[4
]}

Hong, Minghwei ^{[5
,6
]}

Kwo, Jueinai ^{[3
,7
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[4] Woodland Consulting, Morristown, NJ 07960 USA

[5] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan

[6] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[7] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2012年 / 81卷 / 06期

关键词：

GaAs; synchrotron radiation photoemission; surface core-level shift; RECONSTRUCTIONS; DIELECTRICS;

D O I：

10.1143/JPSJ.81.064603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Guided by the known reconstruction of the GaAs(111)A-2 x 2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30 +/- 0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25 +/- 0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk line. Measureable surface effects are confined to the outermost mixed Ga and As layer. The effective spin-orbit ratios are typically below the standard value of 2/3 at kinetic energies near threshold. This phenomenon is related to final state of the excited photo-electron. The inelastic mean-free path was found to average 4 angstrom with a minimum near a kinetic energy of 80 eV.

引用

页数：5

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