On an Ammonia Gas Sensor Based on a Pt/AlGaN Heterostructure Field-Effect Transistor

被引：43
作者：
Chen, Tai-You [1 ]
Chen, Huey-Ing [2 ]
Hsu, Chi-Shiang [1 ]
Huang, Chien-Chang [1 ]
Chang, Chung-Fu [1 ]
Chou, Po-Cheng [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期
关键词：
AlGaN; ammonia; heterostructure field-effect transistor (HFET); sensor; HYDROGEN SENSORS; MECHANISM; NH3;
D O I：
10.1109/LED.2012.2184832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new and interesting Pt/AlGaN heterostructure field-effect transistor (HFET)-based ammonia gas sensor is fabricated and investigated. The related ammonia-sensing mechanisms, including direct dissociation of ammonia gas and triple-point model, are presented. Experimentally, the maximum transconductance variation Delta g(m) and threshold voltage variation Delta V-th are 16.63 mS/mm and 318.1 mV, respectively, upon exposing to a 10 000-ppm NH3/air gas. In addition, the maximum sensing response and rectification ratio of 113.4 and 2.1 x 10(3), respectively, are obtained when 10 000- and 35-ppm NH3/air gases are introduced. Therefore, the studied Pt/AlGaN HFET shows the promise for ammonia-gas-sensing applications.
引用
收藏
页码：612 / 614
页数：3
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