Low-temperature processed SnO2 compact layer for efficient mesostructure perovskite solar cells

被引:53
作者
Duan, Jinxia [1 ]
Xiong, Qiu [1 ]
Feng, Bingjie [1 ]
Xu, Yang [1 ]
Zhang, Jun [1 ]
Wang, Hao [1 ]
机构
[1] Hubei Univ, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Fac Phys & Elect Sci, Wuhan 430062, Peoples R China
基金
中国国家自然科学基金;
关键词
SnO2 compact layer; Perovskite solar cell; Low-temperature processed; INORGANIC HOLE CONDUCTOR; SEQUENTIAL DEPOSITION; ANNEALING TEMPERATURE; HALIDE PEROVSKITES; TIN OXIDE; ELECTRON; PERFORMANCE; FILMS; INSTABILITY; HYSTERESIS;
D O I
10.1016/j.apsusc.2016.06.187
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SnO2 nanoparticle film has been synthesized via low-temperature (-180 degrees C) solution-processing and proposed as compact layer in mesostructure perovskite-type solar cell (PSC). Low-temperature processed SnO2 compact layer (cl-SnO2) brings perfect crystal-lattice and band-gap matching between electron selective layer and FTO substrate and close interface-contact between cl-SnO2 and mesoporous TiO2 layer (mp-TiO2), which contributes to suppressing carrier recombination and optimizing device performance. In varied thickness cells, 70 nm cl-SnO2 device exhibits maximum power conversion efficiency (PCE). In order to further restrain photoelectron recombination and improve the photovoltaic performance, the surface modification of cl-SnO2 by SnCl4 aqueous solution has been carried out. The recombination behavior in the cell interior is greatly retarded via SnCI4 treatment and champion PSC after SnCI4 treatment has acquire PCE of 15.07%, which is higher than PCE of cl-TiO2 based PSC fabricated with same mp-TiO2 and perovskite procedures (13.3%). The stability of cl-SnO2 PSC via SnCI4 treatment has also been measured and its PCE reduces to 13.0% after 2 weeks in air. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:677 / 683
页数:7
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