Anode hole generation mechanisms

被引：8

作者：

Ghetti, A

Alam, M

Bude, J

机构：

[1] STMicroelectronics, I-20041 Agrate Brianza, Italy

[2] Agere Syst, Murray Hill, NJ 07974 USA

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

10.1016/S0026-2714(01)00139-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to the Anode Hole Injection model, holes generated into the anode and tunneling back to the cathode wear out the oxide leading eventually to breakdown. In this paper, anode hole creation by photo-generation and impact ionization is investigated by means of experiments and simulations. Although it has been reported recently that a large number of holes can be, photo-generated in the cathode, we experimentally show that the number of photo-generated holes in the anode is negligible with respect to the ones created by impact ionization. Then, it is shown that minority ionization (when secondary electron stays in the valence band) significantly enhances hole generation and it is at the basis of the breakdown polarity dependence. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1347 / 1354

页数：8

共 19 条

[1]

ALAM M, 2000, P INT REL PHYS S, P21

[2]

ALAM M, COMPUTATIONAL MODEL

[3] HOT-CARRIER LUMINESCENCE IN SI [J].

BUDE, J ;

SANO, N ;

YOSHII, A .

PHYSICAL REVIEW B, 1992, 45 (11) :5848-5856

[4] Explanation of stress-induced damage in thin oxides [J].

Bude, JD ;

Weir, BE ;

Silverman, PJ .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :179-182

[5] QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON [J].

CHANG, C ;

HU, CM ;

BRODERSEN, RW .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :302-309

[6] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[7] SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN [J].

CHEN, IC ;

HOLLAND, S ;

YOUNG, KK ;

CHANG, C ;

HU, C .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :669-671

[8]

CHEN IC, 1986, P INT EL DEV M, P660

[9] Simulation of hot hole currents in ultra-thin silicon dioxides: The relationship between time to breakdown and hot hole currents [J].

Ezaki, T ;

Nakasato, H ;

Yamamoto, T ;

Hane, M .

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, :34-37

[10] Stress induced leakage current analysis via quantum yield experiments [J].

Ghetti, A ;

Alam, M ;

Bude, J ;

Monroe, D ;

Sangiorgi, E ;

Vaidya, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) :1341-1348

← 1 2 →