The electron drift velocity in argon with admixtures of up to 2% of nitrogen, hydrogen or oxygen is measured in a pulsed Townsend system for reduced electric fields ranging from 0.1 Td to 2.5 Td. The results are compared with those obtained by Monte Carlo simulations and from the solution of the electron Boltzmann equation using two different solution techniques: a multiterm method based on Legendre polynomial expansion of the angular dependence of the velocity distribution function and the S (n) method applied to a density gradient expansion representation of the distribution function. An almost perfect agreement between the results of the three numerical methods and, in general, very good agreement between the experimental and the calculated results is obtained. Measurements in Ar-O-2 mixtures were limited by electron attachment to oxygen molecules, which contributes to the measured drift velocity. As a result of this attachment contribution, the bulk drift velocity becomes larger than the flux drift velocity if attachment is more probable for electrons with energy below the mean value and smaller in the opposite case. Attachment also contributes to the negative differential conductivity observed in Ar-O-2 mixtures.
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Volynets, Vladimir
Barsukov, Yuri
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Barsukov, Yuri
Kim, Gonjun
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Kim, Gonjun
Jung, Ji-Eun
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Jung, Ji-Eun
Nam, Sang Ki
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Nam, Sang Ki
Han, Kyuhee
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Samsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South KoreaSamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Han, Kyuhee
Huang, Shuo
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Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA
KLA Corp, 2350 Green Rd,Suite 100, Ann Arbor, MI 48105 USASamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Huang, Shuo
Kushner, Mark J.
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Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USASamsung Elect Co Ltd, Mechatron R&D Ctr, 1-1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea
Kushner, Mark J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2020,
38
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