Temperature dependence of current-voltage characteristics of the Pd/InP Schottky contacts

被引：0

作者：

Kumar, A. Ashok ^{[1
]}

Janardhanam, V. ^{[1
]}

Reddy, V. Rajagopal ^{[1
]}

Reddy, P. Narasimha ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 12期

关键词：

current-voltage characteristics; Schottky contacts; indium phosphide (InP);

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of current-voltage characteristics of the Pd Schottky contacts on n-InP (100) has been measured in the temperature range of 200-400 K. Based on thermionic emission (TE) theory, the forward and reverse current-voltage (I-V) characteristics are analyzed to estimate the Schottky barrier parameters. It is observed the decrease in ideality factor and increase in barrier height (BH) with increasing temperature. The estimated values of barrier height and ideality factor are varied from 0.38 2 eV 2 and 5.48 at 200 K to 0.7 eV and 2.01 at 400 K respectively. The calculated value of Richardson constant is 2.18 A cm(-2) K-2 from temperature dependent I-V studies, which is lower than the known value. The nonlinearity in the Richardson plot and strong dependence of Schottky barrier parameters on temperature may be attributed to the spatial inhomogeneity in the interface. Potential fluctuation model has been used to explain the results obtained in this study.

引用

页码：3877 / 3880

页数：4

共 31 条

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