Inductance-controlled electroab sorption modulator modules using the flip-chip bonding technique

被引：7

作者：

Hatta, T ^{[1
]}

Miyahara, T ^{[1
]}

Ishizaki, M ^{[1
]}

Okada, N ^{[1
]}

Zaizen, S ^{[1
]}

Motoshima, K ^{[1
]}

Kasahara, K ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Itami, Hyogo 6648641, Japan

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2005年 / 23卷 / 02期

关键词：

digital modulation; electroabsorption (EA); flipchip devices; inductance;

D O I：

10.1109/JLT.2004.842303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wire-bonding technique is widely used for the connections between the electroabsorption (EA) modulator chips and the electrical signal transmission lines. However, the parasitic inductance of the bonding wire degrades the electrical characteristics of the EA modulator modules in a high-frequency region. In this paper, we theoretically analyze the influence of parasitic inductance on the base-band digital transmission and obtain the relationship between the EA modulator capacitance and the optimum lead inductance. For precise inductance control, we introduced the flip-chip bonding (FCB) technique and fabricated 40-Gb/s EA modulator modules.

引用

页码：582 / 587

页数：6

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