Photoconductive sampling with an integrated source follower amplifier

被引：12

作者：

Hwang, JR ^{[1
]}

Cheng, HJ ^{[1
]}

Whitaker, JF ^{[1
]}

Rudd, JV ^{[1
]}

机构：

[1] PICOMETRIX INC, ANN ARBOR, MI 48113 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.116255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hybrid, optoelectronic sampling circuit based on a photoconductive switch and a junction-field-effect-transistor (JFET) source follower/amplifier has been demonstrated to have picosecond response, high-sensitivity, absolute-voltage capability, and a very high impedance. The distributed capacitance of the electrical measurement system is reduced to the gate input capacitance of the JFET, and the conventional photoconductive current measurement is transferred into an absolute voltage measurement. Gating measurements with an improvement of 150 times in output voltage over unamplified photoconductive gates have been made using only 10 mu W of average optical power. The effective on-state resistance of the photogate has also been increased by more than 150 times, indicating that a photoconductive probe with very low invasiveness may be produced. (C) 1996 American Institute of Physics.

引用

页码：1464 / 1466

页数：3

共 5 条

[1] 1.9 PICOSECOND HIGH-SENSITIVITY SAMPLING OPTICAL TEMPORAL ANALYZER [J].