Bipolar resistive switching and nonvolatile memory effect in poly (3-hexylthiophene) -carbon nanotube composite films

被引：47
作者：
Chaudhary, Deepti [1 ]
Munjal, Sandeep [1 ]
Khare, Neeraj [1 ]
Vankar, V. D. [1 ]
机构：
[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
来源：
CARBON | 2018年 / 130卷
关键词：
CNT; P3HT; Resistive switching; Nonvolatile memory; ENHANCED PHOTOCATALYTIC PERFORMANCE; TERNARY NANOCOMPOSITE; ORGANIC MEMORY; DEVICES; GRAPHENE; BEHAVIOR;
D O I：
10.1016/j.carbon.2018.01.058
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The resistive switching behavior and nonvolatile memory effects have been investigated in poly (3-hexylthiophene) (P3HT) and carbon nanotubes (CNT) composite thin films. The memory devices with FTO/P3HT-CNT/Al structure were fabricated by varying the CNT content in the composite. The memory device with 4% CNT in P3HT exhibited a typical bipolar resistive switching with set voltage of similar to 1.8 V and a high ON/OFF ratio of > 10(2). The nonvolatile behavior of the device has been studied by the retention test and showed good retention properties for > 10(3) s. The resistance-temperature dependence of different resistance states has also been investigated. Ohmic conduction was found to be a dominant conduction mechanism in low bias region, whereas for the high voltage regime space charge limited conduction was found to be the ruling current conduction mechanism. Bipolar resistive switching characteristic of the nanocomposite film is explained on the basis of rupture and formation of carbon-rich filaments. (c) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：553 / 558
页数：6
相关论文
共 29 条
[1]   Assessing the strengths and weaknesses of various types of pre-treatments of carbon nanotubes on the properties of polymer/carbon nanotubes composites: A critical review [J].
Bose, Suryasarathi ;
Khare, Rupesh A. ;
Moldenaers, Paula .
POLYMER, 2010, 51 (05) :975-993
[2]   Noble metal-free g-C3N4/TiO2/CNT ternary nanocomposite with enhanced photocatalytic performance under visible-light irradiation via multi-step charge transfer process [J].
Chaudhary, Deepti ;
Vankar, V. D. ;
Khare, Neeraj .
SOLAR ENERGY, 2017, 158 :132-139
[3]   Ag nanoparticles loaded TiO2/MWCNT ternary nanocomposite: A visible-light-driven photocatalyst with enhanced photocatalytic performance and stability [J].
Chaudhary, Deepti ;
Khare, Neeraj ;
Vankar, V. D. .
CERAMICS INTERNATIONAL, 2016, 42 (14) :15861-15867
[4]   Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures [J].
Cho, Byungjin ;
Song, Sunghun ;
Ji, Yongsung ;
Kim, Tae-Wook ;
Lee, Takhee .
ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (15) :2806-2829
[5]   Record Endurance for Single-Walled Carbon Nanotube-Based Memory Cell [J].
Di Bartolomeo, A. ;
Yang, Y. ;
Rinzan, M. B. M. ;
Boyd, A. K. ;
Barbara, P. .
NANOSCALE RESEARCH LETTERS, 2010, 5 (11) :1852-1855
[6]   Carbon nanostructures in organic WORM memory devices [J].
Huemmelgen, Ivo A. ;
Coville, Neil J. ;
Cruz-Cruz, Isidro ;
Rodrigues, Rafael .
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (37) :7708-7714
[7]   Studies on resistive switching characteristics of aluminum/graphene oxide/semiconductor nonvolatile memory cells [J].
Jilani, S. Mahaboob ;
Gamot, Tanesh D. ;
Banerji, P. ;
Chakraborty, S. .
CARBON, 2013, 64 :187-196
[8]   Multilevel resistive memory switching in graphene sandwiched organic polymer heterostructure [J].
Khurana, Geetika ;
Misra, Pankaj ;
Katiyar, Ram S. .
CARBON, 2014, 76 :341-347
[9]   Influence of electrical field dependent depletion at metal-polymer junctions on resistive switching of poly(N-vinylcarbazole) (PVK)-based memory devices [J].
Lai, Pei Ying ;
Chen, J. S. .
ORGANIC ELECTRONICS, 2009, 10 (08) :1590-1595
[10]   Direct Observation of a Carbon Filament in Water-Resistant Organic Memory [J].
Lee, Byung-Hyun ;
Bae, Hagyoul ;
Seong, Hyejeong ;
Lee, Dong-Il ;
Park, Hongkeun ;
Choi, Young Joo ;
Im, Sung-Gap ;
Kim, Sang Ouk ;
Choi, Yang-Kyu .
ACS NANO, 2015, 9 (07) :7306-7313
123