Preparation and properties of bulk ZnSe:Cr single crystals

被引:40
作者
Levchenko, VI
Yakimovich, VN
Postnova, LI
Konstantinov, VI
Mikhailov, VP
Kuleshov, NV
机构
[1] NASB, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
[2] BSPA, Ctr Int Laser, Minsk 220072, BELARUS
关键词
single crystals; crystal growth; diffusion; ZnSe; chromium; absorption coefficient; passive losses;
D O I
10.1016/S0022-0248(98)01098-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cr-doped zinc selenide single crystals have been prepared by a two stage process. In the first stage, undoped single crystals were grown by a sublimation traveling heater method (STHM) without seeding. The high quality of the as-grown crystals was confirmed by double crystal X-ray diffraction, which showed the full-width half-maximum (FWHM) of the rocking curves to be less than 20 arcsec on the (2 2 0) diffraction planes of the crystals. Selective chemical etching showed dislocation density of these faces to be less than 5 x 10(4) cm(-2). In the second stage, the ZnSe crystals were Cr-doped by the method of the thermal diffusion from a solid metal source. Cr concentration of 3.3 x 10(19) cm(-3), absorption coefficient of more than 30 cm(-1) at 1750 nm, and passive losses of less than 0.3 cm(-1) at 2500 nm were obtained under optimal technological conditions. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:980 / 983
页数:4
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