Interplay of bimolecular and Auger recombination in photoexcited carrier dynamics in silicon nanocrystal/silicon dioxide superlattices

被引：13

作者：

Chlouba, T. ^{[1
]}

Trojanek, F. ^{[1
]}

Laube, J. ^{[2
]}

Hiller, D. ^{[2
]}

Gutsch, S. ^{[2
]}

Zacharias, M. ^{[2
]}

Maly, P. ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, CR-12116 Prague, Czech Republic

[2] Albert Ludwigs Univ Freiburg, Fac Engn, IMTEK, Georges Kohler Alle 103, D-79110 Freiburg, Germany

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

关键词：

D O I：

10.1038/s41598-018-19967-x

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report results of investigating carrier recombination in silicon nanocrystal/silicon dioxide superlattices. The superlattices prepared by nitrogen-free plasma enhanced chemical vapour deposition contained layers of silicon nanocrystals. Femtosecond transient transmission optical spectroscopy was used to monitor carrier mechanisms in the samples. The three-particle Auger recombination was observed in accord with previous reports. However, under high pump intensities (high photoexcited carrier densities) the bimolecular process dominated the recombination. Detailed analysis of measured data and fitting procedure made it possible to follow and quantify the interplay between the two recombination processes. The bimolecular recombination was interpreted in terms of the trap-assisted Auger recombination.

引用

页数：7

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