Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

被引：8
作者：
Li, MC
Chen, XK
Cai, W
Yin, JH
Yang, JP
Wu, G
Zhao, LC
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Inst Phys, Lab Laser Mol Beam Epitaxy, Lanzhou 730000, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 72卷 / 01期
关键词：
pulsed laser deposition; laser annealing; nanometer thin film;
D O I：
10.1016/S0254-0584(01)00300-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of PtSi ultra-thin films prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was examined by X-ray photoelectron spectroscopy (XPS) and the structure characteristics of PtSi were investigated by XPS. X-ray diffraction (XRD) and atomic force microscopy (AFM). Superb uniformity of PtSi films and smooth PtSi/Si interfaces were obtained by pulsed laser annealing. (C) 2001 Elsevier Science BN. All rights reserved.
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收藏
页码：85 / 87
页数：3
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