Long-range charge carrier mobility in metal halide perovskite thin-films and single crystals via transient photo-conductivity

Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques. For nanosecond to millisecond transient methods, early-time recombination and exciton-to-free-carrier ratio hinder accurate determination of free-carrier population after photoexcitation. By considering both effects, we estimate long-range charge carrier mobilities over a wide range of photoexcitation densities via transient photoconductivity measurements. We determine long-range mobilities for FA(0.83)Cs(0.17)Pb(I0.9Br0.1)(3), (FA(0.83)MA(0.17))(0.95)Cs0.05Pb(I0.9Br0.1)(3) and CH3NH3PbI3-xClx polycrystalline films in the range of 0.3 to 6.7 cm(2) V-1 s(-1). We demonstrate how our data-processing technique can also reveal more precise mobility estimates from non-contact time-resolved microwave conductivity measurements. Importantly, our results indicate that the processing of polycrystalline films significantly affects their long-range mobility. Charge carrier mobility is a fundamental property of semiconductors. The authors of this study demonstrate a novel way to estimate long-range mobilities of perovskite thin-films and single crystals by taking early-time carrier dynamics into account.