Topological phases in two-dimensional materials: a review

被引：440
|
作者：
Ren, Yafei [1 ,2 ,3 ,4 ]
Qiao, Zhenhua [1 ,2 ,3 ,4 ]
Niu, Qian [5 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, ICQD, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
[4] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[5] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
来源：
REPORTS ON PROGRESS IN PHYSICS | 2016年 / 79卷 / 06期
基金：
中国国家自然科学基金;
关键词：
topological phase; Hall effects; electron transport; QUANTUM ANOMALOUS HALL; BERRY-PHASE; EDGE STATES; CHERN INSULATOR; ELECTRIC-FIELD; BAND-GAPS; GRAPHENE; TRANSITION; BISMUTH; STRAIN;
D O I：
10.1088/0034-4885/79/6/066501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Topological phases with insulating bulk and gapless surface or edge modes have attracted intensive attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this review, we mainly focus on recent progress in the engineering of topologically nontrivial phases (such as Z(2) topological insulators, quantum anomalous Hall effects, quantum valley Hall effects etc) in two-dimensional systems, including quantum wells, atomic crystal layers of elements from group III to group VII, and the transition metal compounds.
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页数：40
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