Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process

被引：100

作者：

Chen, YJ ^{[1
]}

Hsu, JH ^{[1
]}

Lin, HN ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 08期

关键词：

D O I：

10.1088/0957-4484/16/8/020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A convenient method for the fabrication of metal nanowires by a combination of atomic force microscopy nanoscratching on a single-layer resist and lift-off process is reported. Various metal nanowires, including Au, Cu, Ni, Al, and Ti, with widths as small as 50 nm are successfully created. The electrical resistivities of the nanowires have also been obtained and found to be in good agreement with reported results.

引用

页码：1112 / 1115

页数：4

共 28 条

[11]

MORALES MET, 2003, APPL PHYS LETT, V82, P2139

[12] Amine vapor sensing with silver mesowires [J].

Murray, BJ ;

Walter, EC ;

Penner, RM .

NANO LETTERS, 2004, 4 (04) :665-670

[13] Nanometer-scale surface modification using the scanning probe microscope: Progress since 1991 [J].

Nyffenegger, RM ;

Penner, RM .

CHEMICAL REVIEWS, 1997, 97 (04) :1195-1230

[14] Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques [J].

Park, YD ;

Jung, KB ;

Overberg, M ;

Temple, D ;

Pearton, SJ ;

Holloway, PH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :16-20

[15] Metallic nanostructures via static plowing lithography [J].

Porter, LA ;

Ribbe, AE ;

Buriak, JM .

NANO LETTERS, 2003, 3 (08) :1043-1047

[16] Metal nanowires: atomic arrangement and electrical transport properties [J].

Rodrigues, V ;

Ugarte, D .

NANOTECHNOLOGY, 2002, 13 (03) :404-408

[17] Nanoscale patterning of Si(100) surfaces by scratching through the native oxide layer using atomic force microscope [J].

Santinacci, L ;

Djenizian, T ;

Schmuki, P .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1882-1884

[18] Optical properties of Ag and Au nanowire gratings [J].

Schider, G ;

Krenn, JR ;

Gotschy, W ;

Lamprecht, B ;

Ditlbacher, H ;

Leitner, A ;

Aussenegg, FR .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :3825-3830

[19] Electrical characterization of copper interconnects with end-of-roadmap feature sizes [J].

Schindler, G ;

Steinlesberger, G ;

Engelhardt, M ;

Steinhögl, W .

SOLID-STATE ELECTRONICS, 2003, 47 (07) :1233-1236

[20] Magnetism of Fe, Co and Ni nanowires in self-assembled arrays [J].

Sellmyer, DJ ;

Zheng, M ;

Skomski, R .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (25) :R433-R460

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