Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process

被引：99
作者：
Chen, YJ [1 ]
Hsu, JH [1 ]
Lin, HN [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
NANOTECHNOLOGY | 2005年 / 16卷 / 08期
关键词：
D O I：
10.1088/0957-4484/16/8/020
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A convenient method for the fabrication of metal nanowires by a combination of atomic force microscopy nanoscratching on a single-layer resist and lift-off process is reported. Various metal nanowires, including Au, Cu, Ni, Al, and Ti, with widths as small as 50 nm are successfully created. The electrical resistivities of the nanowires have also been obtained and found to be in good agreement with reported results.
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收藏
页码：1112 / 1115
页数：4
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