Gas source MBE grown Al0.52In0.48P photovoltaic detector

被引：3

作者：

Li, C. ^{[1
,3
]}

Zhang, Y. G. ^{[1
,2
]}

Gu, Y. ^{[1
]}

Wang, K. ^{[1
,3
]}

Li, A. Z. ^{[1
]}

Li, Hsby ^{[1
]}

Shan, X. M. ^{[2
]}

Fang, J. X. ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

基金：

上海市自然科学基金;

关键词：

GSMBE; Al0.52In0.48P; Photovoltaic detector; MOLECULAR-BEAM EPITAXY; TANDEM SOLAR-CELLS; OPTICAL-PROPERTIES; ALINP; GAAS; ALLOYS;

D O I：

10.1016/j.jcrysgro.2010.10.154

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Al0.52In0.48P photovoltaic detector has been fabricated using gas source molecular beam epitaxy and its characteristics have been measured in detail. The Al0.52In0.48P absorption layer shows a mismatch of +4.76 x 10(-4) to the GaAs substrate with a full width at half maximum of 22.5 arcsec. The dark current is only 0.78 pA at reverse bias of 500 mV and the R(0)A is about 1.7 x 10(8) Omega cm(2) at room temperature. The measured peak responsivity at zero bias is 0.287 A/W at 470 nm with 50% cut-on and cut-off wavelengths at 440 and 495 nm, respectively. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：501 / 503

页数：3

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