Gas source MBE grown Al0.52In0.48P photovoltaic detector

被引：3
|
作者：
Li, C. [1 ,3 ]
Zhang, Y. G. [1 ,2 ]
Gu, Y. [1 ]
Wang, K. [1 ,3 ]
Li, A. Z. [1 ]
Li, Hsby [1 ]
Shan, X. M. [2 ]
Fang, J. X. [2 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
基金：
上海市自然科学基金;
关键词：
GSMBE; Al0.52In0.48P; Photovoltaic detector; MOLECULAR-BEAM EPITAXY; TANDEM SOLAR-CELLS; OPTICAL-PROPERTIES; ALINP; GAAS; ALLOYS;
D O I：
10.1016/j.jcrysgro.2010.10.154
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.52In0.48P photovoltaic detector has been fabricated using gas source molecular beam epitaxy and its characteristics have been measured in detail. The Al0.52In0.48P absorption layer shows a mismatch of +4.76 x 10(-4) to the GaAs substrate with a full width at half maximum of 22.5 arcsec. The dark current is only 0.78 pA at reverse bias of 500 mV and the R(0)A is about 1.7 x 10(8) Omega cm(2) at room temperature. The measured peak responsivity at zero bias is 0.287 A/W at 470 nm with 50% cut-on and cut-off wavelengths at 440 and 495 nm, respectively. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：501 / 503
页数：3
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