Gas source MBE grown Al0.52In0.48P photovoltaic detector

被引：3
|
作者：
Li, C. [1 ,3 ]
Zhang, Y. G. [1 ,2 ]
Gu, Y. [1 ]
Wang, K. [1 ,3 ]
Li, A. Z. [1 ]
Li, Hsby [1 ]
Shan, X. M. [2 ]
Fang, J. X. [2 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
基金：
上海市自然科学基金;
关键词：
GSMBE; Al0.52In0.48P; Photovoltaic detector; MOLECULAR-BEAM EPITAXY; TANDEM SOLAR-CELLS; OPTICAL-PROPERTIES; ALINP; GAAS; ALLOYS;
D O I：
10.1016/j.jcrysgro.2010.10.154
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.52In0.48P photovoltaic detector has been fabricated using gas source molecular beam epitaxy and its characteristics have been measured in detail. The Al0.52In0.48P absorption layer shows a mismatch of +4.76 x 10(-4) to the GaAs substrate with a full width at half maximum of 22.5 arcsec. The dark current is only 0.78 pA at reverse bias of 500 mV and the R(0)A is about 1.7 x 10(8) Omega cm(2) at room temperature. The measured peak responsivity at zero bias is 0.287 A/W at 470 nm with 50% cut-on and cut-off wavelengths at 440 and 495 nm, respectively. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：501 / 503
页数：3
相关论文
共 50 条
  • [1] Avalanche Noise in Al0.52In0.48P Diodes
    Qiao, L.
    Cheong, J. S.
    Ong, J. S. L.
    Ng, J. S.
    Krysa, A. B.
    Green, J. E.
    David, J. P. R.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (04) : 481 - 484
  • [2] Al0.52In0.48P SAM-APD as a Blue-Green Detector
    Cheong, Jeng Shiuh
    Ong, J. Siok Lan
    Ng, Jo Shien
    Krysa, Andrey B.
    David, John P. R.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) : 142 - 146
  • [3] Impact Ionization Coefficients in Al0.52In0.48P
    Ong, Jennifer S. L.
    Ng, Jo S.
    Krysa, Andrey B.
    David, John P. R.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1528 - 1530
  • [4] Al0.52In0.48P 55Fe x-ray-photovoltaic battery
    Butera, S.
    Lioliou, G.
    Krysa, A. B.
    Barnett, A. M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (35)
  • [5] Temperature study of Al0.52In0.48P detector photon counting X-ray spectrometer
    Butera, S.
    Gohil, T.
    Lioliou, G.
    Krysa, A. B.
    Barnett, A. M.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (17)
  • [6] Atomic diffusion and electronic structure in Al0.52In0.48P/GaAs heterostructures
    Smith, P. E.
    Lueck, M.
    Ringel, S. A.
    Brillson, L. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 1916 - 1921
  • [7] Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P
    Ong, Jennifer S. L.
    Ng, Jo S.
    Krysa, Andrey B.
    David, John P. R.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (06)
  • [8] Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy
    Auckloo, A.
    Cheong, J. S.
    Meng, X.
    Tan, C. H.
    Ng, J. S.
    Krysa, A.
    Tozer, R. C.
    David, J. P. R.
    JOURNAL OF INSTRUMENTATION, 2016, 11
  • [9] Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors
    Yow H.K.
    Houston P.A.
    Button C.C.
    David J.P.R.
    Ng C.M.S.
    Journal of Electronic Materials, 1998, 27 (1) : 17 - 23
  • [10] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE
    RITCHIE, S
    SCOTT, EG
    RODGERS, PM
    ELECTRONICS LETTERS, 1986, 22 (20) : 1066 - 1068
12345