Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

被引：0

作者：

Wang, LP ^{[1
]}

Tang, BY ^{[1
]}

Tian, XB ^{[1
]}

Leng, YX ^{[1
]}

Zhang, QY ^{[1
]}

Chu, PK ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2001年 / 17卷 / 01期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, acid many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum are (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample.

引用

页码：29 / 30

页数：2

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