Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices

被引：33

作者：

Ando, Yuichiro ^{[1
]}

Kasahara, Kenji ^{[1
]}

Yamane, Kazutaka ^{[1
]}

Hamaya, Kohei ^{[1
,2
]}

Sawano, Kentarou ^{[3
]}

Kimura, Takashi ^{[4
]}

Miyao, Masanobu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Tokyo 1580082, Japan

[4] Kyushu Univ, INAMORI FRC, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 09期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

ROOM-TEMPERATURE; ELECTRICAL DETECTION; INJECTION; SILICON; TRANSPORT;

D O I：

10.1143/APEX.3.093001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We perform a detailed comparison of the nonlocal magnetoresistance (MR) curve with the local MR ones in Si-based lateral spin-valve devices with epitaxial ferromagnetic Fe3Si contacts, where the local MR originates from the anisotropic MR of the ferromagnetic contacts. We find that the nonlocal MR signals clearly depend on the magnetization reversal of the contacts, and they show positive or negative peak values when the magnetic configuration between two ferromagnetic contacts becomes nearly anti-parallel. These features mean that the obtained nonlocal MR signals can be distinguished from the suspicious signals, indicating a reliable result of the spin transport in Si. (c) 2010 The Japan Society of Applied Physics

引用

页数：3

共 18 条

[1] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier [J].