(Co) content in Circuits With Memristive Elements

被引：10

作者：

Biolek, Zdenek ^{[1
]}

Biolek, Dalibor ^{[1
,2
]}

Biolkova, Viera ^{[3
]}

机构：

[1] Brno Univ Technol, Microelect Dept, CS-61090 Brno, Czech Republic

[2] Univ Def, Dept Elect Engn, Brno, Czech Republic

[3] Brno Univ Technol, Radioelect Dept, CS-61090 Brno, Czech Republic

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2015年 / 62卷 / 02期

关键词：

Cocontent; content; memristive system; memristor; pinched hysteresis loop; NONLINEAR NETWORKS; HYSTERESIS;

D O I：

10.1109/TCSI.2014.2364694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with the extension of the concept of content and cocontent functions, known from the theory of non-linear resistive circuits, to circuits with memristive elements. The connection between the (co)content and the area of the hysteresis loop of a memristive element is indicated. It is proved and demonstrated on examples that the area of the hysteresis loop of a oneport, composed entirely of memristive elements, equals the sum of the areas of the loops of individual memristive elements. It is also proved that the law of conservation of (co)content applies also to circuits with memristive elements.

引用

页码：488 / 496

页数：9

共 18 条

[1]

[Anonymous], 1949, VARIATIONAL PRINCIPL

[2] Interpreting area of pinched memristor hysteresis loop [J].