Magneto infrared absorption in high electron density GaAs quantum wells

被引：36
作者：
Poulter, AJL
Zeman, J
Maude, DK
Potemski, M
Martinez, G
Riedel, A
Hey, R
Friedland, KJ
机构：
[1] Max Planck Inst Festkorperforsch, CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.86.336
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.
引用
收藏
页码：336 / 339
页数：4
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