GaN-based multiple quantum well light-emitting devices

被引：0

作者：

Koike, M ^{[1
]}

Iwayama, S ^{[1
]}

Yamasaki, S ^{[1
]}

Tezen, Y ^{[1
]}

Nagai, S ^{[1
]}

Kojima, A ^{[1
]}

机构：

[1] Toyoda Gosei Co Ltd, Optoelect, Aichi 4528564, Japan

来源：

LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V | 2001年 / 4278卷

关键词：

GaInN/GAN; MQW; LD; CW; MOVPE;

D O I：

10.1117/12.426840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical-guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 300 hours with 3mW at the wavelength of 409 nm.

引用

页码：119 / 126

页数：4

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