Effect of UV anneal on plasma CVD low-k film

被引：22

作者：

Shioya, Yoshimi ^{[1
]}

Ohdaira, Toshiyuki ^{[2
]}

Suzuki, Ryoichi ^{[2
]}

Seino, Yutaka ^{[2
]}

Omote, Kazuhiko ^{[3
]}

机构：

[1] Nanomat Lab Co Ltd, Tsuzuki Ku, Kanagawa 2240029, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Rigaku Co Ltd, Tokyo 1968666, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 26期

关键词：

amorphous metals; metallic glasses; dielectric properties; relaxation; electric modulus; plasma deposition; indentation; microindentation; FTIR measurements; silicates;

D O I：

10.1016/j.jnoncrysol.2007.12.011

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low-k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant (k value). The thickness measurement method for the UV annealed low-k film is discussed. The effects of UV irradiation on dielectric constant, shrinkage, stress, density, pore size, mechanical strength, and structure are clarified and the mechanism is discussed. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2973 / 2982

页数：10

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