Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

被引：52

作者：

Bruccoleri, F ^{[1
]}

Klumperink, EAM ^{[1
]}

Nauta, B ^{[1
]}

机构：

[1] Univ Twente, IC Design Grp, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 07期

关键词：

low noise amplifiers; LNAs; systematic generation; variable-gain amplifier; voltage-controlled current source; VCCS; wide-band amplifier;

D O I：

10.1109/4.933458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that a MOSFET is exploited as a voltage-controlled current source (VCCS), This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band low noise amplifier (LNA) has been designed in 0.35-mum CMOS, Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB, These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V.

引用

页码：1032 / 1040

页数：9

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