A robust high-Q micromachined RF inductor for RFIC applications

被引：57

作者：

Lin, JW ^{[1
]}

Chen, CC ^{[1
]}

Cheng, YT ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Microsyst Integrat Lab, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期

关键词：

accelerative and thermal disturbance system; high-Q micromachined inductor; radio frequency integrated circuit (RFIC); robust design; signal stability;

D O I：

10.1109/TED.2005.850612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a robust micromachined spiral inductor with a cross-shaped sandwich membrane support is proposed and fabricated with fully CMOS compatible post-processes for radio frequency integrated circuit (RFIC) applications. Via the incorporation of a sandwich dielectric membrane (0.7 mu M SiO2/0.7 mu M Si3N4/0.7 mu m TEOS) to enhance the structure rigidity, the inductor can have better signal stability. In comparison, the new design of a similar to 5-nH micromachined inductor can have 45% less inductance variation than the one without the dielectric support while both devices are operated with 10 m/s(2) acceleration. Meanwhile, using a cross shape instead of blanket membrane can also effectively eliminate the inductance variation induced by the working temperature change (20 degrees C to 75 degrees C). The measurement results show the robust inductor can have similar electrical performance to the as-fabricated freely suspended inductor, which has five times Q (quality factor) improvement than the inductor without the substrate removal. It is our belief that the new micromachined inductors can have not only high-Q performance but also better signal stability suitable for wide-range RFIC applications.

引用

页码：1489 / 1496

页数：8

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