Structural property of polycrystalline silicon films on aluminum-doped zinc oxide-coated glass

被引：0
|
作者：
Wang, Weiyan [1 ,2 ]
Huang, Jinhua [1 ]
Zhang, Xianpeng [1 ]
Yang, Ye [1 ]
Tan, Ruiqin [3 ]
Song, Weijie [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Chinese Acad Sci, CAS Key Lab Mat Energy Convers, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[3] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 328卷 / 01期
基金：
中国博士后科学基金; 中国国家自然科学基金; 浙江省自然科学基金;
关键词：
Crystallization; Physical vapor deposition processes; Semiconducting silicon; Solar cells; SOLID-PHASE CRYSTALLIZATION; SI THIN-FILMS; AMORPHOUS-SILICON; SOLAR-CELLS; VOLUME FRACTION; RAMAN; QUALITY;
D O I：
10.1016/j.jcrysgro.2011.06.028
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structural properties of crystalline silicon (Si) films on bare and aluminum-doped zinc oxide (AZO)-coated glass substrates were comparatively investigated by X-ray diffractometer, Raman spectroscopy, and transmission electron microscope. It was observed that for the amorphous Si (a-Si) films on bare and AZO-coated glass substrates subjected to five-step rapid thermal annealing (RTA) at 750 degrees C/60 s, they were both polycrystalline in nature and, moreover, the Si characteristic peak intensity of Si films on AZO-coated glass was slightly higher than that of Si films on bare glass, while the crystalline volume fractions of Si films on both substrates were nearly similar. Furthermore, it was revealed that a-Si films on AZO-coated glass can be crystallized when subjected to five-step RTA 750 degrees C/60 s, while Zn(2)SiO(4) new phase was formed at RTA temperature of 900 degrees C or higher, which may influence the crystalline Si films property. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：30 / 33
页数：4
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