Operation of Photonic Crystal Laser in Continuous-Wave Mode for 18 Hours

被引：5

作者：

Kim, Sihan ^{[1
,2
]}

Kim, Sunghwan ^{[1
,2
]}

Hwangy, Kyungwook ^{[1
,2
]}

Jeon, Heonsu ^{[1
,2
,3
]}

Kim, Hyo Jin ^{[4
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Tufts Univ, Inter Univ Semicond Res Ctr, Medford, MA 02155 USA

[3] Seoul Natl Univ, Dept Biophys & Chem Biol, Seoul 151747, South Korea

[4] Korea Photon Technol Inst, Kwangju 500779, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

BAND-EDGE LASER; HIGH-POWER; NANOCAVITY; SILICON;

D O I：

10.1143/APEX.4.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the continuous-wave (CW) operation of a photonic crystal (PC) laser with a device lifetime of 18 h. This achievement was possible owing to the combination of an efficient heat-dissipating submount comprising silicon, diamond, and MgF2 layers and an additional MgF2 layer that acts as a top confinement layer; this feature improved the physical stabilization of the device structure. We expect that an even longer device lifetime for a PC laser under CW operation can be achieved if an advanced technique that enables strong interface bonding between the InGaAsP and MgF2 layers is developed. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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