Electronic design criteria for O-O bond formation via metal-oxo complexes

被引:371
作者
Betley, Theodore A. [2 ]
Wu, Qin [1 ]
Van Voorhis, Troy [1 ]
Nocera, Daniel G. [1 ]
机构
[1] MIT, Dept Chem, Cambridge, MA 02139 USA
[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
关键词
D O I
10.1021/ic701972n
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Metal-oxos are critical intermediates for the management of oxygen and its activation. The reactivity of the metal-oxo is central to the formation of O-O bonds, which is the essential step for oxygen generation. Two basic strategies for the formation of O-O bonds at metal-oxo active sites are presented. The acid-base (AB) strategy involves the attack of a nucleophilic oxygen species (e.g., hydroxide) on an electrophilic metal-oxo. Here, active-site designs must incorporate the assembly of a hydroxide (or water) proximate to a high-valent metal-oxo of even d electron count. For the radical coupling (RC) strategy, two high-valent metal-oxos of an odd d electron count are needed to drive O-O coupling. This Forum Article focuses on the different electronic structures of terminal metal-oxos that support AB and RC strategies and the design of ligand scaffolds that engender these electronic structures.
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收藏
页码:1849 / 1861
页数:13
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