CHx/PS/Si as structure for propane sensing

被引:9
作者
Belhousse, S
Gabouze, N
Cheraga, H
Henda, K
机构
[1] UDTS, Algiers, Algeria
[2] CDTA, Algiers, Algeria
关键词
CHx; deposition; porous silicon; gas sensor; propane;
D O I
10.1016/j.tsf.2004.11.155
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the last years, the interest for a better monitoring of the air pollution has become a major key factor in the industrial development. Application of porous silicon for gas sensing devices has gained considerable attention in the last decade. Generally, porous silicon sensing properties observed are changes of electrical capacitance in the presence of gases and the quenching of photoluminescence. In this work, we report on the hydrocarbons deposition on porous silicon (PS) and the application of CHx/PS/Si as structure for propane sensing. Porous silicon layer was made from p-type Si by electrochemical anodization. The porous sample was coated with hydrocarbon groups deposited by plasma of methane. The current voltage, response time and capacitance response characteristics were studied, in order to evaluate the response and sensitivity of heterostructure devices to propane gas environment. Finally, after 1 year, the sensor preserves its features, such as sensibility, response time and stability. (c) 2004 Published by Elsevier B.V.
引用
收藏
页码:253 / 257
页数:5
相关论文
共 12 条
[1]   INVESTIGATION OF ELECTRICAL-PROPERTIES OF AU POROUS SI/SI STRUCTURES [J].
ADAM, M ;
HORVATH, ZJ ;
BARSONY, I ;
SZOLGYEMY, L ;
VAZSONYI, E ;
VANTUYEN, V .
THIN SOLID FILMS, 1995, 255 (1-2) :266-268
[2]   Influence of solution resistivity and post-anodizing treatments of PS films on the electrical and optical properties of metal/PS/Si photodiodes [J].
Ait-Hamouda, K ;
Gabouze, N ;
Hadjersi, T ;
Benrekaa, N ;
Outemzabet, R ;
Cheraga, H ;
Beldjilali, K ;
Mahmoudi, B .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 76 (04) :535-543
[3]   Fabrication and characterisation of a new sensing device based on hydrocarbon groups (CHx) coated porous silicon [J].
Belhousse, S ;
Cheraga, H ;
Gabouze, N ;
Outamzabet, R .
SENSORS AND ACTUATORS B-CHEMICAL, 2004, 100 (1-2) :250-255
[4]   NO2 monitoring at room temperature by a porous silicon gas sensor [J].
Boarino, L ;
Baratto, C ;
Geobaldo, F ;
Amato, G ;
Comini, E ;
Rossi, AM ;
Faglia, G ;
Lérondel, G ;
Sberveglieri, G .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :210-214
[5]  
CANHAM LT, 1997, PROPERTIES POROUS SI, P44
[6]  
CHERAGA H, IN PRESS APPL SURFAC
[7]   Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects [J].
Fellah, S ;
Wehrspohn, RB ;
Gabouze, N ;
Ozanam, F ;
Chazalviel, JN .
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) :109-113
[8]   INFLUENCE OF HUMIDITY ON TRANSPORT IN POROUS SILICON [J].
MARES, JJ ;
KRISTOFIK, J ;
HULICIUS, E .
THIN SOLID FILMS, 1995, 255 (1-2) :272-275
[9]  
MULLONI V, 2000, P POR SEM SCI TECHN, P00101
[10]  
Ouchabane M., 1999, P 14 INT S PLASM CHE, VIV, P1709