Ge/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As

被引：2

作者：

Guo, Hua Xin ^{[1
]}

Kong, Eugene Yu Jin ^{[1
]}

Zhang, Xingui ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

NONALLOYED OHMIC CONTACTS; N-TYPE GAAS; NICKEL GERMANIDE; HIGH-PERFORMANCE; CHANNEL; MOSFETS; GE; REGROWTH; MOBILITY;

D O I：

10.1143/JJAP.51.02BF06

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate a solid state reaction between Ge and Ni-InGaAs on n(+) In0.53Ga0.47As and its effects on the contact resistance of Ni-based contacts on InGaAs. This reaction was performed by isochronous annealing of Ge on Ni-InGaAs at temperatures ranging from 400 to 600 degrees C in N-2 ambient. It was found that a regrown InGaAs layer rich in Ge was formed below the metal contact. Compared with Ni-InGaAs contact, more than 60% reduction in contact resistance on Si-implanted n-In0.53Ga0.47As was achieved after annealing at 600 degrees C. This contact structure was characterized by secondary ion mass spectroscopy, high resolution transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

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