A reliability-aware RF power amplifier design for CMOS radio chip integration

被引：23

作者：

Ruberto, Mark ^{[1
]}

Degani, Ofir ^{[1
]}

Wail, Shay ^{[1
]}

Tendler, Alex ^{[1
]}

Fridman, Amir ^{[1
]}

Goltman, Germady ^{[1
]}

机构：

[1] Intel Corp, Adv Technol Ctr, Mobile Wireless Grp, IL-31015 Haifa, Israel

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

CMOS; power amplifier; Wi-Fi; hot carrier; ESD; thermal; RFIC; reliability;

D O I：

10.1109/RELPHY.2008.4558942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.

引用

页码：536 / 540

页数：5

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