Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates

被引：4
|
作者：
Li, Xue-Fei [1 ]
Liu, Xiao-Jie [1 ]
Fu, Ying-Ying [1 ]
Li, Ai-Dong [1 ]
Zhang, Wen-Qi [1 ]
Li, Hui [1 ]
Wu, Di [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Mat Sci & Engn Dept, Nanjing 210093, Jiangsu, Peoples R China
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 01期
关键词：
SURFACE PASSIVATION; GERMANIUM; STATES;
D O I：
10.1116/1.3665416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have investigated the effect of 500 degrees C annealing for 60 s in N-2 on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on n-type Ge substrates. X-ray photoelectron spectroscopy analyses reveal that the SiO2 interlayer can effectively suppress Ge outdiffusion during HfO2 growth and subsequent postdeposition annealing process. The electrical measurement shows that capacitance equivalent thickness of 1.75 nm and a leakage current density of 3.9 x 10(-3) A/cm(2) at gate bias of flatband voltage (V-fb) + 1V was obtained for the annealed sample. The conduction band offsets at the HfO2/SiO2/Ge with and without annealing are found to be 2.22 and 2.07 eV, respectively. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3665416]
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页数：4
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